| 发明名称 |
THIN FILM TRANSISTOR |
| 摘要 |
PURPOSE: To provide a thin film transistor having good pentode characteristic. CONSTITUTION: In a thin film transistor having an active layer 5, a gate electrode 7 and a bottom gate electrode 3 which is shorter than this gate electrode 7 in the direction of source region and drain region are arranged in the area opposed to the gate electrode 7 with respect to the active layer 5.
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| 申请公布号 |
JPH08241997(A) |
申请公布日期 |
1996.09.17 |
| 申请号 |
JP19950043748 |
申请日期 |
1995.03.03 |
| 申请人 |
TDK CORP;SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
ARAI MICHIO;SUGIURA KAZUJI;TAKAYAMA ICHIRO;YAMAUCHI YUKIO;KOBORI ISAMU;KODAMA MITSUFUMI;SAKAMOTO NAOYA |
| 分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/336 |
| 代理机构 |
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