N-channel field-effect transistor including a thin-film fullerene

摘要

An n-channel field-effect transistor is fabricated utilizing a thin-film fullerene (for example, C60) as the active element. The fullerene film is deposited onto a device substrate in an ultra-high-vacuum chamber and is thus substantially oxygen-free. Subsequently, while still in the chamber, the fullerene film is encapsulated with a material that is impervious to oxygen.