Method for producing a silicon single crystal by a float-zone method

摘要

A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 mu m; heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 1000 gauss to the molten zone; and passing the molten zone through the length of the polysilicon rod thereby the polysilicon rod is converted into a silicon single crystal ingot through a one-pass zoning of the floating zone method. An apparatus for reducing the method into practice is also described.