| 摘要 |
PURPOSE: To enhance a transparent oxide substrate in processing accuracy by a method wherein a marker where an inorganic material is previously deposited so as to make it lower than the transparent oxide substrate in transmission factor is provided onto the transparent oxide substrate before a first photolithography is executed when an electronic element is formed of the transparent oxide substrate higher than a specific value in transmission factor. CONSTITUTION: A semiconductor layer 2 and a ferroelectric layer 3 are laminated on a transparent oxide substrate 1 through a laser evaporation method. At this point, the total sum of the visible ray transmission factors of the substrate 1, the semiconductor thin film 2, and the ferroelectric layer 3 is 20% or above. Then, a part of the substrate 1 where an element is formed is covered with a single crystal Si wafer, and when an Au-Pd alloy is deposited as inorganic material only on a part of the substrate 1 where a marker is deposited, the Au-Pd alloy-deposited part becomes lower than 5% in transmission factor to visible rays. A photolithography method is used, a first resist pattern is arranged, the rest parts of the semiconductor layer and the ferroelectric layer other than the masked parts are removed by etching, a residual organic resist layer is removed, and then a second photolithography is carried out. |
