发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE: To obtain a semiconductor device which enhances a signal transmission rate by a stray capacitance between a semiconductor chip and a lead, which reduces an electric noise and which prevents the short circuit of a bonding wire. CONSTITUTION: In a semiconductor device, shared inner leads 3A2 are bonded, via an insulator, to parts near the central line along the long side of the circuit formation face of a rectangular semiconductor chip, a plurality of inner leads 3A1 for signals are bonded via an insulator, and the inner leads 3A1 , the shared inner leads 3A2 and the semiconductor chip are connected by means of bonding wires so as to be sealed with a resin. The plurality of inner leads 3A1 for signals are arranged on both sides of the shared inner leads 3A2 , outer leads 3B and outer leads 3B which are integrated with the plurality of inner leads 3A1 for signals are derived from side faces of the long side of a sealing resin.
申请公布号 JPH08241952(A) 申请公布日期 1996.09.17
申请号 JP19960063973 申请日期 1996.03.21
申请人 HITACHI LTD 发明人 MURAKAMI HAJIME;TSUBOSAKI KUNIHIRO;ICHITANI MASAHIRO;NISHI KUNIHIKO;ANJO ICHIRO;NISHIMURA ASAO;KITANO MAKOTO;YAGUCHI AKIHIRO;KAWAI SUEO;OGATA MASAJI;EGUCHI KUNIYUKI;KOKADO HIROYOSHI;SEGAWA MASANORI;HOZOJI HIROYUKI;YOKOYAMA TAKASHI;KANESHIRO TOKUYUKI;KANEDA AIZO;SAEKI JUNICHI;NAKAMURA SHOZO;HASEBE AKIO;KIKUCHI HIROSHI;YOSHIDA ISAMU
分类号 H01L21/60;H01L23/50 主分类号 H01L21/60
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