| 摘要 |
<p>PURPOSE: To cancel the voltage fluctuation and to decrease the flickers by patterning transparent conductive films with gate lines and data lines as a mask in order to form pixel electrodes in plural regions enclosed by these wirings. CONSTITUTION: Oxide 403 is formed on the surfaces of the gate lines 402 formed on a substrate 401 and gate insulating films 404, semiconductor channel regions 405, drain regions 406 and source regions 407 are formed thereon and the data lines 408 are formed. Further, an insulating and flattening film 409 of a polyimide, etc., is formed and electrode holes are bored in it. A transparent conductive film 410 is formed on the front surface. Next, a photoresist 411 is applied on the front surface and is irradiated with light from the rear side of the substrate 401 to expose the resist. Consequently, the resists in the parts of the metallic wirings are removed and only the resist 411 of the other parts remains. The transparent conductive film 410 is etched with the remaining resist 411 as a mask to obtain the pixel electrodes 412.</p> |
