Method of manufacturing a semiconductor device having low sodium concentration

摘要

A method of manufacturing a semiconductor device having a non-single crystalline semiconductor layer including an intrinsic silicon which contains hydrogen or halogen and is formed on a substrate by a vapor phase reaction in a reaction chamber which may have a substrate holder. Sodium is removed from the inside of the reaction chamber and/or the surface of the substrate holder by using a chlorine containing gas at a sufficiently high temperature such as 1150 DEG C. in order to remove sodium therefrom so that the concentration of sodium in the semiconductor layer is preferably 5x1018 atoms/cm3 or less.