发明名称 Enhanced electron beam addressed storage target
摘要 A electron beam row at a time addressed storage target includes substrate with a plurality of column electrodes affixed to the substrate by a suitable means. Adjacent column electrodes are displaced by a first period. The target includes a grid for collecting secondary electrons generated by bombarding the secondary electron emission means affixed to the substrate with a plurality of electron beams. Each beam strikes the target at a beam landing area. The beam landing areas of adjacent electron beams are displaced by the first period. The beam landing areas are positioned so each beam landing area is overlapped by a respective column electrode. A respective potential difference is applied between each electrode and the grid. Charge acquired by the target at each beam landing area is dependent upon the respective potential difference applied between the electrode which overlaps the beam landing area and the grid. Charge transfer is an equilibrium process involving secondary emissions. A scan means is provided to control the position of the beam landing areas perpendicular to the first period thereby enabling the target to be row addressed. Applications of storage targets could include spatial light modulation. A suitable reflection means is provided to reflect a wavefront incident upon the target. This allows the electron beams and the wavefront to be incident on opposing surfaces of the substrate.
申请公布号 US5557177(A) 申请公布日期 1996.09.17
申请号 US19940183037 申请日期 1994.01.18
申请人 ENGLE, CRAIG D. 发明人 ENGLE, CRAIG D.
分类号 G09G1/20;G09G3/20;G09G3/22;G11C11/30;G11C13/04;H01J29/46;H01J31/58;(IPC1-7):G09G1/04;H01T29/56;G02F1/03;G11C13/00 主分类号 G09G1/20
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