| 摘要 |
PROBLEM TO BE SOLVED: To provide a photosensitive film pattern forming method for a semiconductor element, capable of eliminating the problems of a swell ring, external diffusion and deformation appearing in the conventional DESIRE process. SOLUTION: In this DESIRE process, a separate process is not provided for silicon implantation, and the top of a photosensitive film 3 is coated with a monomar 2 containing silicon. Thereafter, the silicon monomar 2 is exposed. As a result, H+ generated in a chemically, sensitized photosensitive film 3 as an underlayer and the silicon monomar 2 are polymerized to form a polymer. In this case, the polymer comes to have a property not removed by use of a general developing solution. Thus. the silicon monomar film 2 can be developed, using a general developing solution. Furthermore, when the chemically sensitized photosensitive film 3 is etched at a subsequent process, the polymer containing the silicon is not etched, but rather a thin oxide film (SiO2 ) is formed on the upper surface thereof for acting as an etching mask. |
