摘要 |
PCT No. PCT/FR93/00040 Sec. 371 Date Nov. 2, 1993 Sec. 102(e) Date Nov. 2, 1993 PCT Filed Jan. 14, 1993 PCT Pub. No. WO93/14164 PCT Pub. Date Jul. 22, 1993The subject-matter of the present invention is to solve the technical problem resulting from the instability in air of polysilanes. For this purpose, it proposes a polysilane-based composition, used particularly for producing silicon carbide, comprising: polysilane chains capable of being degraded by oxidation and the formation of polysiloxane-type products and/or polysilane chains suitable for being bound together directly by a reaction between Si-H and Si-X radicals, and/or indirectly through the intermediary of a crosslinking additive and by a reaction between A-X and A-H radicals, X being an olefin radical, preferably comprising 1 to 18 carbon atoms and, more preferably still, being constituted by a vinyl radical (Vi:-CH=CH2), A being an organic, organosilicic or silicic radical; and at least one antioxidant system.
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