DUAL GATE FIELD EFFECT TRANSISTOR,申请号JP19950070601-传众专利搜索

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发明名称	DUAL GATE FIELD EFFECT TRANSISTOR
摘要
申请公布号	JPH08242007(A)	申请公布日期	1996.09.17
申请号	JP19950070601	申请日期	1995.03.03
申请人	SONY CORP	发明人	TANAKA SHINICHI
分类号	H01L29/41;H01L21/338;H01L29/47;H01L29/80;H01L29/812;H01L29/872;(IPC1-7):H01L29/80	主分类号	H01L29/41
代理机构		代理人
主权项
地址

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