| 摘要 |
<p>PURPOSE: To separate the levels of heavy positive holes and light positive holes, while being a thick or multiple quantum well, by conforming the level of electrons to a plurality of wells, and besides, conforming the level of only one side out of the light positive holes and the heavy positive holes to them. CONSTITUTION: An active layer 4 has two quantum wells between SCH layers 15 and 16 of p-type and n-type InGaASP. The quantum well comprises a well (1) consisting of In0.53 Ga0.47 As, for example, 10nm thick, a well (2) consisting of In0.62 Ga0.38 As0.9 P0.1 , for example, 10nm thick, and a barrier layer 17 consisting of InGaASP, for example, 7nm thick lying between the well (1) and the well (2). The well (2) consists of material a little larger than a substrate 1, and in the case of having epitaxially grown it, it receives in-plane compressive stress by the mismatching of lattices of about 0.29%. For the semiconductor crystal having received in-plane stress, the band gap to the light positive pole and the heavy positive hole changes.</p> |
