| 摘要 |
<p>PURPOSE: To improve S/N on the disturbance light of an infrared detecting device by reducing influence of the disturbance light containing near infrared rays in the infrared detecting device to detect a human being and an object. CONSTITUTION: A surface thin film layer M which has a low reflectance in a visible area and a near infrared ray area and has high reflectance in an infrared ray area and has wave length selectivity, is formed on a reflecting mirror 1 used as an optical means of the infrared detecting device. In the surface thin film layer M, a nickel film is formed on a reflecting surface, and electroplating processing of black chrome is applied onto it.</p> |
