发明名称 |
VERFAHREN ZUR HERSTELLUNG EINES DÜNNFILMTRANSISTORS |
摘要 |
A thin film transistor (2) is produced by applying onto a non-silicon foundation (1), a thin film of silicon semiconductor material (8) under such conditions that polycrystalline or microcrystalline material is formed. Source (3) and/or drain (4) regions of doped semiconductor material are then formed onto the film; following by applying insulating material (9) onto the film, and a gate region onto the insulating material. The source and/or drain regions are applied so that such regions have a crystalline structure that depends upon the crystalline structure of the underlying thin film. The resulting source and drain regions have high lateral conductivity so that source and drain contacts (5,6) can be made with reduced cross-sectional areas. The method may employ a self-alignment process to simplify device production. |
申请公布号 |
AT141715(T) |
申请公布日期 |
1996.09.15 |
申请号 |
AT19890201379T |
申请日期 |
1989.05.30 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW |
发明人 |
KOBAYASHI, KAZUHIRO;BAERT, KRIS AUGUST EMILIA FERDINAND;NIJS, JOHAN FRANCIS ALBERT |
分类号 |
H01L21/302;H01L21/205;H01L21/3065;H01L21/336;H01L29/78;H01L29/786;(IPC1-7):H01L21/84;H01L21/86 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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