| 摘要 |
PURPOSE: To provide a vertical resonator type surface emission semiconductor laser and its manufacture, which is capable of easily forming a current constriction construction by a method capable of easily forming an electrode. CONSTITUTION: An n-type multilayer film reflector 2 comprising an n-GaAs layer 21 and n-InGaP layer 22 is formed on an n-Gaps substrate 1, and an etching mask is formed on this n-type multilayer film, reflector 2. And by using this mask, one or more layers of n-GaAs layer 21 and n-InGaP layer 22 constituting the n-type multi-layer film reflector are etched threby forming a mesa construction. Then, a current constriction layer is formed by dispersing a p-type impurities on the surface other than the crest of this mesa construction, this mask is removed, and then a surface emission semiconductor laser is produced by laminating a p-type semiconductor multilayer film reflector 8 comprising an n-AlGaAs clad layer 51 , a non-dope active layer 6, a p-AlGaAs clad layer 72 , a p-GaAs layer 81 and a p-AlAs layer 82 on said mesa construction. |
