| 摘要 |
PURPOSE:To prevent the electric shortcircuit of a gate electrode with a contact opened at an insulating film covering on source and drain regions by convering the overall surface of a polycrystalline silicon with a silicon nitrided film. CONSTITUTION:A silicon oxidized film 11 is formed on the upper inactive region of a silicon substrate 10. Then, the exposed surface 12 is oxidized to obtain an oxidized film 13, and a silicon nitrided film 14 is then accumulated thereon. Subsequently, a polycrystalline silicon film 15 is accumulated on the overall surface, is processed to a desired pattern, and is used for a gate electrode and wires. Then, a silicon nitrided film 16 is obtained, and the entire outer peripheral side of the polycrystalline silicon is completely covered with the silicon nitrided film by the film and a CVD nitrided silicon film 14 used as a gate insulating film. |
