| 摘要 |
<p>PURPOSE: To increase the surge withstanding strength by forming intermediate electrodes DC-independent of counter electrodes at the end faces perpendicular to both main faces of a semiconductor cerami c board. CONSTITUTION: On both main faces 14a and 14b of a rectangular parallelepiped semiconductor ceramic board 11 are formed counter electrodes 12a and 12b and on the end faces 15a-15d perpendicular to the main faces 14a and 14b are formed four intermediate electrodes 13a-13d. To the electrodes 12a and 12b are connected lead wires 16. In such a chip type varistor, a surge current of charges flowing into one electrode 12a flows to the other electrode 12b and part thereof flows to the intermediate electrodes 13a,..., this reducing the surge current acting on the electrodes 12a and 12b. Thus, a chip type varistor having a high surge withstanding strength can be obtained at low cost, without greatly changing the size and shape of the element.</p> |
