| 摘要 |
PURPOSE: To effectively photocurrents generated from a plurality of pin junctions to an external circuit by oppositely disposing a P-type semiconductor layer and an n-type semiconductor layer via an intrinsic semiconductor layer. CONSTITUTION: A layer configuration has an insulating board 1, a first P-type semiconductor layer 2, a first intrinsic semiconductor layer 3, a first n-type semiconductor layer 4, a second intrinsic semiconductor layer 3, a second P-type semiconductor layer 2, a third intrinsic semiconductor layer 3 and a second n-type semiconductor layer 4, where the P-type and n-type layers 2, 4 are electrically connected. The layer 2 is connected to a metal electrode 5, the layer 4 is connected to a metal electrode 6, and the electrodes 5, 6 are electrodes for supplying currents to an external circuit. Accordingly, since charges can move to the P-type and n-type semiconductors without recombination due to a defect in the film, the generated charge, i.e., the generated photocurrent can be efficiently externally output, thereby obtaining a thin film solar cell having a high photoelectric conversion efficiency. |
