| 摘要 |
PURPOSE: To provide a method and device for removing impurities remaining on the surface of a silicon substrate without performing any high-temperature heat treatment before forming a film on the surface of the substrate by epitaxial growth. CONSTITUTION: After a silicon substrate 1, from the surface of which carbonaceous impurities are to be removed, is set in a vacuum vessel 2 incorporated with a filament 4 while maintaining in room-temperature, the vessel 2 is evacuated to <=1×10<-8> Torr with a vacuum pump 3. After evacuation, an H2 gas 6 is introduced to the vessel 2 until the pressure in the vessel 2 becomes 1×10<-4> Torr and the temperature of the filament 4 is raised to about 1,800 deg.C by conducting the filament 4. As a result, the H2 gas 6 filling the vessel 2 dissociates to atomic hydrogen when the gas 6 collides with the filament 4 and a silicon hydroxide is produced when the hydrogen collides with the substrate 1 and reacts to the silicon on the surface of the substrate 1. When the silicon hydroxide leaves the substrate 1, the hydroxide carries the carbonaceous impurities.
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