| 摘要 |
PROBLEM TO BE SOLVED: To form silicon carbide of large diameter by a method wherein a single crystal layer in a specific range of thickness is formed by making a first element react chemically on an initial single crystal layer of second element which is in a specific range of initial thickness and on a dielectric layer. SOLUTION: A single crystal layer as thick as 200 to 20,000Å is formed through such a manner that a first element is made to react chemically on an initial single crystal layer of second element located on a dielectric layer. It is important that the second element layer has an initial thickness of 100 to 10,000Å. First, a comparatively thin layer 3 of crystal material is formed on a dielectric layer 2. Then, the layer 3 is turned into a compound single crystal reacting on a second different element. At this point, carbon is deposited as a second element 4. Germanium, cobalt, titanium, or tantalum can be used as the second element 4 besides carbon. |
