| 摘要 |
PURPOSE: To grow a high-quality ZnSrSSe II-VI compound semiconductor mixed crystal thin film by a method wherein the thin film is simply formed in an MBE growth by using a ZnS crystal, a metal Se and a metal Sr as the raw materials for heating evaporation sources and moreover, the composition of the thin film and the carrier concentration of the thin film can be controlled with good accuracy. CONSTITUTION: In a vacuum metallizer having an exhaust device, a heating mechanism for a substrate 10 and heating evaporation sources 2 to 8, as the raw materials for the sources 2 to 8, a ZnS crystal 2, a metal Se 4 and a metal Sr 3 are used and a ZnY'Sr1- Y'SZ'Se1- Z', (0<Y'<1 and 0<Z'<1) thin film is formed on the substrate 10. Thereby, as a metal Zn does not exist but a ZnS polycrystal only exists in the raw materials on Zn, an S molecular beam of the same intensity as that of a Zn molecular beam can be obtained from a ZnS polycrystalline raw material. Moreover, as the more the content of S is increased, the larger the band gap in a ZnSrSSe is increased, it becomes possible to form a ZnSrSSe thin film having a large band gap. |
