| 摘要 |
PROBLEM TO BE SOLVED: To reduce the turn-off loss of a GTO thyristor without boosting a forward voltage and increasing an ignition current, by fixing the thickness and the doping concentration of a rear-side emitter region in a specific range. SOLUTION: A GTO thyristor is provided with a semiconductor substrate consisting of an intermediate area 1 connected with a base resin 2 at its front side and with an emitter region 7 at its rear side. Then, the rear-side emitter region is provided with a 0.4 to 2μm thickness of 4×10<16> to 1×10<18> cm<-3> doping concentration. On the other hand, the rear-side emitter is not provided with any short circuit part or is provided with an extremely weak short circuit part. This short-circuit part occupies 1 to 10% of the surface of the whole rear-side emitter surface. In addition, a stop layer 10 which is doped more intensely than the intermediate region 1 is mounted into between the region 7 and the region 1. As a resut, a continuing and switching loss is lowered.
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