| 摘要 |
<p>PURPOSE: To provide a means for decreasing defects by the short circuiting of drain bus line and island-shaped auxiliary capacitor electrode and improving the production yield. CONSTITUTION: Insulating layer 9 which does not allow the permeation of oxygen and does not contain oxygen is formed on the island-shaped auxiliary capacitor electrodes 43 , 8 consisting of silicide layer and pixel electrode 10 consisting of transparent conductor film of ITO, etc., are formed via contact holes on the insulating layer 9 at the time of producing the thin-film transistor(TFT) matrix substrate having the drain bus line 70 and the gate bus line 22 , the TFT disposed in the intersected part of these bus line and the pixel electrode 10 connected to source electrode 71 of the TFT on a transparent substrate 1. Cr layer 73 for contact having the etching rate lower than the etching rate of the silicide layer is formed between the silicide layer and the insulating film. The contact hole is formed with these layers as an etching stopper.</p> |
