| 摘要 |
<p>PURPOSE: To provide an active matrix type liquid crystal display element with which the assurance of a high production yield and the decrease of photolithography stages and etching stages are possible. CONSTITUTION: This active matrix type liquid crystal display element has thin- film transistors 41 including gate electrodes 32, gate insulating films 33 arranged on these gate electrodes 32, semiconductor films 35 arranged on these gate insulating films 33, semiconductor protective films 34 arranged on these semiconductor films 35, source electrodes 38 and drain electrodes 40 electrically connected to the semiconductor films 35 on an insulating substrate 30. The semiconductor films 35 are flatly formed to shapes complying with the contour lines of the semiconductor protective films 34, the source electrodes 38 and the drain electrodes 40.</p> |
