| 摘要 |
PURPOSE: To provide a capacitive acceleration sensor in which an interval between electrodes can be accurately formed. CONSTITUTION: A second silicon substrate 3 made of an n<-> type single-crystal silicon is connected to the upper surface of a first silicon substrate 2 made of n<+> type single crystal to form a semiconductor substrate 4. A cantilever beam 5 is formed at the substrate 3. A block 8 is provided at the beam 5. The block 8 is formed of n<+> type silicon formed by diffusion an impurity, and formed substantially in a rectangular parallelepiped shape. The block 8 is held att a predetermined interval from the upper surface of the substrate 2 by the beam 5. A capacitor in which the substrate 2 is used as a fixed electrode and the block 8 is used as a movable electrode is formed of the substrate 2 and the block 8. |
