发明名称 CIRCUIT TO RESTRICT OUTPUT VOLTAGE OF POWER TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a circuit for limiting the output voltage of a power transistor TR which prevents a parasitic element from being triggered and is simple at a low cost and reduces a production failure rate. SOLUTION: This circuit which limits the output voltage of a power TR T1 connected in series to a resonance load ZL between a first electrode VS and a second electrode (GND) of a supply voltage generator is provided with a semiconductor junction device 40 which is provided with a first terminal A connected to the first electrode Va of the supply voltage generator, a second terminal K connected to a common circuit node VC between the power TR T1 and the resonance load ZL, and a third terminal G connected to a reference voltage of a prescribed value E.
申请公布号 JPH08237095(A) 申请公布日期 1996.09.13
申请号 JP19950307683 申请日期 1995.11.27
申请人 SGS THOMSON MICROELETTRONICA SPA 发明人 SERUJIO PARAARA
分类号 H01L29/772;H01L21/8222;H01L27/06;H01L29/76;H03K17/08;H03K17/0814;H03K17/16;H03K17/64 主分类号 H01L29/772
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