| 摘要 |
<p>PURPOSE: To realize efficient plasma processing by disposing a second electrode for applying DC voltage under a dielectric layer while insulating from a first electrode and setting the distance between the first electrode and the upper surface of the dielectric layer shorter than the distance between the second electrode and the upper surface of the dielectric layer thereby restraining the self-bias voltage of a wafer from lowering. CONSTITUTION: A first electrode 2 for applying high frequency voltage is disposed under a dielectric layer 1 of ceramic, for example, having flat upper surface. A second layer 3 for applying DC voltage is disposed under the dielectric layer 1 while insulating from the first electrode 2. The distance (d) between the first electrode 2 and the upper surface of the dielectric layer 1 is set shorter than the distance between the second electrode 3 and the upper surface of the dielectric layer 1. With such arrangement, the self-bias voltage of a wafer is retrained from lowering when high density plasma is employed thus realizing high rate efficient plasma processing.</p> |
