METHOD OF FABRICATION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a method of fabrication of a semiconductor device capable of easily achieving flattening on an insulating layer such as a BPSG layer and an SOG layer and of applying wiring and the like with high reliability and redundance in a later process. CONSTITUTION: There is provided a method of fabrication of a semiconductor device such as a dynamic RAM wherein upon flattening a layer (e.g. a BPSG layer 66) including a step (e.g. global step 62) formed with an upper part (e.g. a part on a memory cell array part MA) and a lower part (e.g. a part on a peripheral circuit part PC) a resist layer 70 is formed into a predetermined pattern such that an end part is located on a slope 62A forming the step part 62 after preannealing. A higher layer 66 than the resist layer is uniformly removed by etching by a predetermined thickness using the resist layer as a mask, and thereafter a protruded part (e.g. a protrusion 66A produced after the etching) existent on a lower side than the resist layer 70 is eliminated with a reflow processing in the state where the resist layer T670 is removed.