| 摘要 |
<p>PURPOSE: To realize a data read-out circuit capable of performing an amplifying operation effectively and at high speed even under a low power source voltage. CONSTITUTION: A current detection type sense-amplifier 53 detects the signal current of a bit line BL and a reference bit line PBL generated with a minute difference and increases the difference to input it to anodes Na1, Nb2 of a latch type semiconductor sense-amplifier 43. The voltage difference is amplified in the latch type sense-amplifier 43 to be outputted. Thus, the amplifying operation is performed efficiently and at high speed even under the voltage equal to or less than 3 volts.</p> |
