| 摘要 |
PURPOSE: To fill up a fine contact hole having a high aspect ratio at low temperature condition so as to obtain highly reliable wiring by forming two-layer metallic wiring composed of a first Al-containing metallic film and second Al-containing metallic film having a melting point lower than that of the first layer on barrier metals in the hole. CONSTITUTION: After forming a contact hole by forming an oxide insulating film 3 on an Si substrate 2 coated with a P<+> -type diffusion layer 1 and etching the film 3, a Ti thin film 5 and TiN thin film 6 are successively formed by sputtering and lamp annealing is performed in a nitrogen atmosphere. During the course of the lamp annealing, the thin films 5 and 6 act as barrier metals. An Al-Si or Al-Si-Cu alloy film is then formed on the barrier metals 5 and 6 as a first Al-bearing metallic film 7 by sputtering and an Al-Ge-Si or Al-Ge-Si- Cu alloy film is formed on the film 7 as a second Al-bearing metallic film 8 having a melting point lower than that of the film 7 and made to reflow at 300 deg.C. |
