| 摘要 |
PURPOSE: To efficiently obtain a highly flat semiconductor wafer by simultaneously polishing both surfaces of the wafer after the wafer is obtained by slicing an ingot and the peripheral edge section of the wafer is chamfered and specular finishing the surface of the wafer, and then, cleaning the wafer. CONSTITUTION: After a wafer 1 is obtained by slicing an ingot, the peripheral edge section of the wafer 1 is chamfered and the cut face of the wafer 1 is flattened by lapping. Then, the lapped wafer is put in the retaining hole 21 of a carrier 2 and the carrier is held between a lower polishing plate 3 carrying polishing cloth 4a fixed to its upper surface and upper polishing plate 4 carrying polishing cloth 4a fixed to its lower surface by pressing the plates 3 and 4 against the carrier 2. While the carrier 2 is held between the plates 3 and 4 in such a state, both surface of the wafer 1 is simultaneously polished by rotating the plates 3 and 4 in the opposite directions. After polishing both surfaces, one surface of the wafer 1 is finished to a mirror surface and, finally, the wafer 1 is washed. Thus a highly flat semiconductor wafer can be obtained efficiently.
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