| 摘要 |
PURPOSE: To measure the position of a resist pattern and a level difference between an exposure area and an unexposed area without developing by emitting an electromagnetic wave to a resist film via a mask having electromagnetic wave transmitting and shielding areas. CONSTITUTION: After a resist film is formed on a semiconductor wafer 18, it is loaded on the wafer stage 26 of an exposure unit. An alignment mark 21b and a superposition reference pattern 32b are formed on the wafer 18 before the film is formed. The positional deviation of the mark 21b from an alignment lattice 24 is measured by using an alignment optical system 29, and the wafer 18 is moved in response to the positional deviation of the both by a laser length measuring instrument 25. Then, the film on the wafer 18 is emitted by the exposure from an illumination optical system via a mask 14. After the exposure, a resist pattern in which the exposure area in which the resist film thickness is varied and an unexposure area in which the film thickness is not varied are mixed is manifested without developing, the reflected lights from both the area surfaces are detected, and the shape of the resist pattern is measured. |
