| 摘要 |
PURPOSE: To attain a high attraction force at the time of producing a semiconductor by forming a ceramic resistor layer principally comprising the crystal phase of aluminum nitride containing a kind of element selected from groups 2b and 6b except oxygen and having volume resistivity within a specified range at a specified temperature on the surface of a substrate. CONSTITUTION: An electrode 2 for applying voltage is provided on the surface of a substrate 1 made of a dielectric having volume resistivity of 10<14> Ω-cm or above under room temperature and a ceramic resistor later 3 is formed thereon. The resistor layer 3 principally comprising the crystal phase of aluminum nitride containing an element of group 2b, e.g. Zn, or an element of group 6b, e.g. S, except oxygen and having volume resistivity of 10<7> -10<13> Ω-cm at 25 deg.C is formed by CVD, for example. With such arrangement, high attraction force can be attained at the time of producing a semiconductor while stabilizing the attraction characteristics over a wide temperature range. |
