| 摘要 |
<p>PURPOSE: To prevent the malfunction of an element due to gate voltage drop by forming a high resistance area with different material or resistance from other areas near the opening of a gate electrode encircling the sharp end of an emitter cone. CONSTITUTION: A gate electrode 3 with a SiO2 insulating layer 2 and a polysilicon layer is laminated on a substrate 1 with a single crystal Si conductor or a conductive layer on the surface by using a CVD method. After a cavity 4 is formed by photolithography, a conical emitter cone 6 made of high melting point metal such as Mo is formed by deposition and sacrificed layer etching. Voltage is applied to the gate electrode 3 to form an electric field with which electrons are emitted from the end of the emitter cone 6. In such a field emission cold cathode, a high resistance area 5 is formed near the opening of the gate electrode 3 encircling the end of the emitter cone 6. This area 5 is formed by masking and then ion-implanting impurities into the exposure of the gate electrode 3 to give conductivity thereto.</p> |
