| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide the gate electrode of semiconductor devices which causes no problems of a silicide aggregation phenomenon and a decrease in the reliability of a gate oxide film, and the most suitable forming method for the gate electrode. SOLUTION: The gate electrode of a semiconductor element is structured including a gate oxide film 22 formed on a semiconductor substrate 20, a polycrystalline silicon film 24 formed on the gate oxide film 22, a silicide layer 26 formed on the polycrystalline silicon film 24, and a low-resistance metal layer 34 formed on the silicide layer 26. Therefore, the problems are resolved and it is expected that the electrical characteristics and reliability of the gate electrode can be improved.</p> |
