发明名称
摘要 PURPOSE:To control diffusion of a noise charge and to prevent a malfunction of a device, by forming an electrode of a layer high in its charge mobility on the periphery of a device to be protected. CONSTITUTION:A source diffusion layer and a drain diffusion 1 are made to be first layers, and a well diffusion layer 2 is made to be a second layer. An electrode of a third layer 3 lower in its resistance than the second layer 2 is made to be of the same type as the well and it is made high in its impurity concentration so as to have a contact 4. A stay of noise charges can be remarkably relaxed in the well 2 in this way. Since diffusion of charges is hence promoted at a low resistance part 3 and the stay of noise charges can be suppressed, this device can be prevented from malfunctioning caused by the noise charges.
申请公布号 JP2532471(B2) 申请公布日期 1996.09.11
申请号 JP19870145053 申请日期 1987.06.12
申请人 HITACHI LTD 发明人 HISAMOTO MASARU;TAKEDA EIJI
分类号 H01L29/78;H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L29/78
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