发明名称 Double mask hermetic passivation structure
摘要 A passivation structure is formed using two passivation layers and a protective overcoat layer using two masking steps. The first passivation layer is formed over the wafer and openings are provided to expose portions of the pads for testing the device and fusible links. After testing and laser repair, a second passivation layer is formed over the wafer followed a deposit of the protective overcoat. The protective overcoat is patterned and etched, exposing the pads. The remaining portions of the protective overcoat are used as a mask to remove portions of the second passivation layer overlying the pads. Leads are then attached to pads and the devices are encapsulated for packaging. <MATH>
申请公布号 EP0696056(A3) 申请公布日期 1996.09.11
申请号 EP19950304787 申请日期 1995.07.10
申请人 SGS-THOMSON MICROELECTRONICS, INC. 发明人 BRYANT, FRANK RANDOLPH;SINGH, ABHA RANI
分类号 H01L21/66;H01L23/31;H01L23/525;(IPC1-7):H01L21/66 主分类号 H01L21/66
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