Multi-layered composition containing crystalline silicon carbide

摘要

The fabrication of silicon carbide components requires single-crystal silicon carbide which is as defect-free as possible. Crystal defects are largely avoided if the silicon carbide has grown on a single-crystal substrate, whose lattice parameter is reasonably well matched to the lattice parameters of the silicon carbide. In order to be able to operate lateral components integrated in the silicon carbide, the substrate has to be an insulator. Suitable single-crystal substrates for this purpose include magnesium oxide, zirconium oxide and spinel. The silicon carbide is applied to the single-crystal substrate by means of a plasma-assisted CVD process or by gas phase epitaxy.