| 摘要 |
<p>A dry etching method for the selective plasma etching of an Al-free compound semiconductor layer stacked on an Al-containing compound semiconductor layer, which is characterized by carrying out etching at a wafer surface temperature lower than about 90 DEG C by using an etching gas containing at least one chlorine compound selected from the group consisting of S2Cl2, S3Cl2 and SCl2 or at least one bromine compound selected from the group consisting of S2Br2, S3Br2 and SBr2, and at least one non-depositable fluorine compound selected from the group consisting of SF6, NF3, XeF2, HF, ClF, ClF3, BrF3 and BrF5. <IMAGE></p> |
