| 摘要 |
The semiconductor device consists of a semiconductor chip (1), an electrode contact spot (4) on the clip, an inner terminal conductor (5), a thin metal wire (6), providing an electrical connection between (5 and 4), and casting resin (8) encapsulating all these components. The contact spot and metal wire are bonded by melting the tip of the wire to form a ball of metal and pressing this against the contact spot so that the ball is compressed to a height of 5-15 microns. The other tip of the wire is bonded to the inner terminal conductor. The wire pref. consists of an alloy contg. Au as main constituent. The contact spot is pref. an Al alloy or a thin film of Al, BPSG (glass contg. B and P) and silicon dioxide. ADVANTAGE - Bond structure minimises stress between chip and resin during dip-soldering after moisture absorption, hence no cracks form in silicon. |
