| 摘要 |
A semiconductor memory device writes data to memory cells contained in the memory device in response to an enable signal supplied thereto. The memory device includes, a pair of bit lines connected to the memory cells, and a sense amplifier connected to the pair of bit lines to latch cell data read from the memory cells. The pair of bit lines couples to a data writing circuit, which writes data to the memory cells in response to the first enable signal. The memory device also includes a switching circuit connected to the sense amplifier, for disabling the sense amplifier in response to the first enable signal.
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