发明名称 |
Semiconductor laser device |
摘要 |
On an n-type GaAs semiconductor substrate, an n-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate, an active layer and a p-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate are formed, and a p-type barrier cladding layer formed of AlGaInP system crystal or AlInP system crystal is provided in the p-type cladding layer. The p-type barrier cladding layer has a thickness through which electrons are almost not transmitted, has tensile strain, and also has band gap energy larger than that of the p-type cladding layer.
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申请公布号 |
US5555271(A) |
申请公布日期 |
1996.09.10 |
申请号 |
US19940363619 |
申请日期 |
1994.12.23 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
HONDA, SHOJI;SHONO, MASAYUKI;HIROYAMA, RYOJI;BESSHO, YASUYUKI;KASE, HIROYUKI;NISHIDA, TOYOZO;UETANI, TAKAHIRO;SUZUKI, JUNKO |
分类号 |
H01S5/00;H01S5/20;H01S5/223;H01S5/32;H01S5/343;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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