Method and apparatus for redundancy word line replacement in a semiconductor memory device

摘要

A method and apparatus for redundancy word line replacement in a semiconductor device involves generating a control signal which causes the data on the data lines to be flipped when the bit pattern of the memory cells coupled to a redundant word line are complementary to the bit pattern of the memory cells of a defective word line which is being replaced by the redundant word line. During both read and write operations, a data flip control signal is input to a data flip circuit to control the state of the bit information.