| 发明名称 |
Manufacturing Method of a Silicon Wafer Having a Controlled BMD Concentration in the Bulk and a Good DZ Layer |
| 摘要 |
In a heat history initializing step, a heat treatment in performed in an atmosphere including at least one of hydrogen, helium, and argon while the temperature is increased in a range of 700.degree.C to 1,000.degree.C at a rate of 15-1,000.degree.C/ min. In a controlled nuclei growing step, a heat treatment is performed in the above atmosphere while the temperature is kept constant in a range of 850.degree.C to 980.degree.C for 0.5-60 minutes.
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| 申请公布号 |
CA2171375(A1) |
申请公布日期 |
1996.09.10 |
| 申请号 |
CA19962171375 |
申请日期 |
1996.03.08 |
| 申请人 |
TOSHIBA CERAMICS CO., LTD. |
发明人 |
HAYASHI, KENRO;TAKEDA, RYUJI;CHAKI, KATSUHIRO;XIN, PING;YOSHIKAWA, JUN;SAITO, HIROYUKI |
| 分类号 |
C30B15/00;C30B33/00;H01L21/322;(IPC1-7):H01L21/00;H01L21/70;H01L21/02 |
主分类号 |
C30B15/00 |
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