Method of forming passivation film

摘要

A passivation film is formed by plasma CVD process in which organic oxysilane is used as a raw gas. When an SiO2 film as the passivation film is formed on a surface of a substrate, Ar, He or NH3 gas is used as a reactive gas which serves as an auxiliary for decomposing the raw gas. Ashing of the substrate by oxygen or hydrogen radicals is thus prevented. Fluorine group gas of CF4 or NF3 may be added to the reactive gas. The SiO2 film as a passivation film as described above may be formed first as an initial passivation film and then another passivation film may be formed on top of the initial passivation film by using a reactive gas having an ashing effect such as O2, N2O, O3 and H2.