| 摘要 |
PURPOSE:To obtain single crystal having good crystallizing property and a small impurity content by shifting an SiC single crystal substrate in an Si melt contg. specified elements, separated to high temp. zone and low temp. zone and can be heated to elevate its temp. in a stage for forming an SiC single crystal having p-n junction. CONSTITUTION:An Si melt contg. Al as p type dopant is charged to a carbon crucible 1 having opened upper surface, and a high temp. zone A being elevated to ca. 1,650 deg.C at its center and a low temp. zone B being at lower temp. than A are provided. About 0.3 deg.C/mm. temp. gradient is provided to the low temp. zone B so that the temp. of the melt at the bottom face of the crucible 1 becomes ca. 1,630 deg.C. In this state, an SiC single crystal substrate 4 is attached to a jig and immersed in the melt 2 so as to hold the substrate in the low temp. zone B and a p type SiC single crystal is grown on the surface of the substrate 4. Then, the substrate 4 is transferred to the high temp. zone A and the high temp. zone A is heated simultaneously so as the bottom of the high temp. zone A reaches ca. 1,700 deg.C and the bottom of the crucible reaches ca. 1,670 deg.C. Thus, A in the melt 2 is removed by evaporation and the melt 2 is brought to a non-doped condition. Thereafter, N2 is introduced into the melt 2 and the substrate 4 is transferred to the low temp. zone B, and an n type SiC single crystal is grown on a p type SiC single crystal. |
