发明名称 DIAMOND THIN FILM STRUCTURE WITH HIGH THERMAL CONDUCTIVITY
摘要 A continuous diamond structure deposited by chemical vapor deposition is disclosed having at least two controlled thermal conductivity layers where one controlled thermal conductivity layer is controlled by a high growth rate and high substrate temperature and another layer is controlled by a lower growth rate and substrate temperature. Multiple layers can be deposited in any sequence to obtain a continuous diamond structure having improved thermal conductivity. <IMAGE>
申请公布号 JPH08231298(A) 申请公布日期 1996.09.10
申请号 JP19950252111 申请日期 1995.09.29
申请人 GENERAL ELECTRIC CO <GE> 发明人 ERITSUKU ODOMANDO AINSETSUTO
分类号 C30B25/22;C23C16/27;C30B29/04;H01L21/205;(IPC1-7):C30B29/04 主分类号 C30B25/22
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