发明名称 |
DIAMOND THIN FILM STRUCTURE WITH HIGH THERMAL CONDUCTIVITY |
摘要 |
A continuous diamond structure deposited by chemical vapor deposition is disclosed having at least two controlled thermal conductivity layers where one controlled thermal conductivity layer is controlled by a high growth rate and high substrate temperature and another layer is controlled by a lower growth rate and substrate temperature. Multiple layers can be deposited in any sequence to obtain a continuous diamond structure having improved thermal conductivity. <IMAGE> |
申请公布号 |
JPH08231298(A) |
申请公布日期 |
1996.09.10 |
申请号 |
JP19950252111 |
申请日期 |
1995.09.29 |
申请人 |
GENERAL ELECTRIC CO <GE> |
发明人 |
ERITSUKU ODOMANDO AINSETSUTO |
分类号 |
C30B25/22;C23C16/27;C30B29/04;H01L21/205;(IPC1-7):C30B29/04 |
主分类号 |
C30B25/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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