发明名称 |
Trench capacitor cells for a dram having single monocrystalline capacitor electrode |
摘要 |
The present structure is characterized by the electrode of a trench capacitor of a DRAM and a periphery thereof. A trench is formed adjacent to an N type region in a substrate. An insulating film is formed on the side wall of this trench and only a part of the insulating film around the upper portion of the trench is removed, forming a window. An N type polycrystalline silicon film of a lower capacitor electrode is formed over a region from the bottom of the trench to below the window, and a capacitor insulating film is formed on this polycrystalline silicon film. A polycrystalline silicon film which becomes a first upper capacitor electrode is formed on the capacitor insulating film, filling the trench up to the lower edge of the window. A monocrystalline silicon film which becomes a second upper capacitor electrode is formed on the latter polycrystalline silicon film in such a way as to contact an N type region, filling the upper portion of the trench. An insulating film similar to a gate insulating film on the substrate is formed on the monocrystalline silicon film.
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申请公布号 |
US5555520(A) |
申请公布日期 |
1996.09.10 |
申请号 |
US19940353368 |
申请日期 |
1994.12.02 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUDO, AKIRA;KOHYAMA, YUSUKE;KOYAMA, HARUHIKO |
分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;H01L29/94;(IPC1-7):H01L29/68 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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