发明名称 Circuit for biasing FET amplifier with single power supply
摘要 A power supply circuit disclosed herein includes a three-terminal regulator for stabilizing a positive voltage applied thereto, a voltage converter for converting the stabilized voltage into a negative voltage, a power-supply section for stabilizing a voltage by a light-emitting diode, and a control circuit for applying a bias voltage across a drain and source of a GaAs FET amplifier only when a voltage is being applied across the gate and source of the amplifier. When power is introduced from a power supply, the presence of the negative voltage supplied from the voltage converter is sensed by the control circuit and a bias begins to be applied to the gate. Therefore, when it is sensed that a predetermined voltage is applied to the gate, a bias begins to be applied to the drain of the FET thereafter. When power from the power supply is cut off, a drop in voltage is sensed and the drain bias begins being cut off while the gate bias for the FET is cut off thereafter.
申请公布号 US5554954(A) 申请公布日期 1996.09.10
申请号 US19940358593 申请日期 1994.12.14
申请人 NEC CORPORATION 发明人 TAKAHASHI, HIDEAKI
分类号 H01L29/80;G05F1/56;G05F1/565;(IPC1-7):G05F3/02 主分类号 H01L29/80
代理机构 代理人
主权项
地址