发明名称 |
Process for forming a negative resist using high energy beam |
摘要 |
A negative type resist for high energy beam such as electron beam, X-rays or the like made from quinone diazide ester of an oligomer having a polymerization degree of 1-20, and a process for forming a pattern with the same type resist.
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申请公布号 |
US4600684(A) |
申请公布日期 |
1986.07.15 |
申请号 |
US19840574363 |
申请日期 |
1984.01.27 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
YAMASHITA, YOSHIO;KAWAZU, RYUJI |
分类号 |
G03F7/023;(IPC1-7):G03F7/26 |
主分类号 |
G03F7/023 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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