发明名称 Process for forming a negative resist using high energy beam
摘要 A negative type resist for high energy beam such as electron beam, X-rays or the like made from quinone diazide ester of an oligomer having a polymerization degree of 1-20, and a process for forming a pattern with the same type resist.
申请公布号 US4600684(A) 申请公布日期 1986.07.15
申请号 US19840574363 申请日期 1984.01.27
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 YAMASHITA, YOSHIO;KAWAZU, RYUJI
分类号 G03F7/023;(IPC1-7):G03F7/26 主分类号 G03F7/023
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